Method of manufacturing a capacitor and a metal gate on a...

Details Method of manufacturing a capacitor and a metal gate on a... Method of manufacturing a capacitor and a metal gate on a...

2007-01-16

2007-01-16

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S926000, C438S243000, C438S244000, C438S386000, C257SE21396

Reexamination Certificate

active

11054448

ABSTRACT:
A method of manufacturing a capacitor and a metal gate on a semiconductor device comprises forming a dummy gate on a substrate, forming a trench layer on the substrate and adjacent the dummy gate, forming a capacitor trench in the trench layer, forming a bottom electrode layer in the capacitor trench, removing the dummy gate to provide a gate trench, forming a dielectric layer in the capacitor trench and the gate trench, and forming a metal layer over the dielectric layer in the capacitor trench and the gate trench.

REFERENCES:
patent: 4963501 (1990-10-01), Ryan et al.
patent: 6387750 (2002-05-01), Lai et al.
patent: 6613621 (2003-09-01), Uh et al.
patent: 2002/0024119 (2002-02-01), Tanaka et al.
patent: 2005/0255642 (2005-11-01), Liu et al.
Hang Hu, “A High Performance MIM Capacitor Using HfO2Dielectrics”, IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002, 0741-3106/02, pp. 514-516.
Chi Shih Chang, “Applications of Metal-Insulator-Metal (MIM) Capacitors”, International SeMaTech, 20 pages.

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