Method of manufacturing a capacitor

Details Method of manufacturing a capacitor Method of manufacturing a capacitor

1997-05-21

2000-02-29

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

060308664

ABSTRACT:
A capacitor and a method of manufacturing a capacitor which includes the steps of sequentially forming an insulating layer and an etch stop layer over a semiconductor substrate; selectively etching the etch stop layer and the insulating layer to form a contact hole; forming a plug within the contact hole; forming a pillar on the etch stop layer adjacent to the plug and on the plug; forming a dielectric layer at the sides of the pillar; removing the pillar and forming a conductive layer over the dielectric layer; and forming an insulating layer over the conductive layer and etching the insulating layer and the conductive layer to expose the upper portion of the dielectric layer.

REFERENCES:
patent: 5160762 (1992-11-01), Brand et al.
patent: 5447881 (1995-09-01), Ryou
patent: 5496757 (1996-03-01), Rosner
patent: 5691227 (1997-11-01), Kim
patent: 5700709 (1997-12-01), Park et al.

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