Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-02-12
2011-10-18
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S282000, C257SE21409
Reexamination Certificate
active
08039332
ABSTRACT:
A semiconductor device includes a semiconductor channel region and a gate region, wherein the gate region includes at least one buried part extending under the channel region. The buried part of the gate region is formed from a cavity under the channel region. The cavity is filled with a first material. An opening is made to access the first material. In one implementation, aluminium is deposited in the opening in contact with the first material. An anneal is performed to cause the aluminium to be substituted for the first material in the cavity. In another implementation, a second material different from the first material is deposited in the opening. An anneal is performed to cause an alloy of the first and second materials to be formed in the cavity.
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French Search Report, FR 0851265, dated Oct. 24, 2008 (2 pages).
Bernard Emilie
Coronel Philippe
Guillaumot Bernard
Vizioz Christian
Commissariat a l''Energie Atomique
Gardere Wynne & Sewell LLP
Pert Evan
STMicroelectronics (Crolles 2) SAS
STMicroelectronics (Grenoble) SAS
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