Method of manufacturing a BiCMOS integrated circuit fully integr

Details Method of manufacturing a BiCMOS integrated circuit fully integr Method of manufacturing a BiCMOS integrated circuit fully integr

1997-06-06

1999-03-30

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, H01L 218238

Patent

active

058888616

ABSTRACT:
A process for manufacturing a BiCMOS integrated circuit is implemented by adapting the masking and doping steps used in forming CMOS devices. Thus simultaneous formation of both CMOS and bipolar device structures eliminates the need for any additional masking or process steps to form bipolar device structures. Collector regions 20 of NPN transistors are formed simultaneously with N-wells 18. Collector regions of PNP transistors, if required, are formed simultaneously with P-wells 16. Base regions 24 of the bipolar transistors are formed using threshold voltage implant steps and/or lightly doped drain implant steps of PMOS transistors. Emitter regions 59 are formed, when using a single polysilicon CMOS process, simultaneously with the CMOS gates 72, 74. When employing a double polysilicon CMOS process, the emitter regions 59 are formed concurrently with the second polysilicon layer interconnect structure and/or source/drain regions 50,52 of NMOS transistors. For single polysilicon CMOS process, the buried layer regions 66 are formed during buried contact formation.

REFERENCES:
patent: 4764482 (1988-08-01), Hsu
patent: 4855245 (1989-08-01), Neppl et al.
patent: 4912055 (1990-03-01), Min et al.
patent: 5290714 (1994-03-01), Onozawa
patent: 5366907 (1994-11-01), Sasaki
patent: 5597757 (1997-01-01), Maeda et al.
patent: 5776807 (1998-07-01), Ronkainen et al.
Embabi et al. , "Digital BiCMOS Integrated Circuit Design," Kluwer Academic Publishers (1993), pp. 32-38. no month.

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