Method of manufacture of undoped polysilicon as the floating-gat

Details Method of manufacture of undoped polysilicon as the floating-gat Method of manufacture of undoped polysilicon as the floating-gat

1998-09-17

2000-09-19

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438594, H01L 21336, H01L 214763

Patent

active

061210889

ABSTRACT:
Form a split gate EEPROM memory device on a doped silicon semiconductor substrate starting with an initial oxide layer and form an undoped first polysilicon layer thereon. Then form a polysilicon oxide hard mask over the undoped first polysilicon layer for use in patterning the initial oxide layer and the undoped first polysilicon layer which are then etched to form a floating gate electrode stack from the undoped first polysilicon layer and the initial oxide layer on the substrate. Then form a tunnel oxide layer and a doped polysilicon and pattern them into control gate electrode stack, with the control gate electrode stack being located in a split-gate configuration with respect to the floating gate electrode stack.

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