Method of manufacture of a silicon carbide MOSFET including...

Details Method of manufacture of a silicon carbide MOSFET including... Method of manufacture of a silicon carbide MOSFET including...

2006-04-18

2006-04-18

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S518000, C438S519000

Reexamination Certificate

active

07029969

ABSTRACT:
A semiconductor device and its manufacturing method in which the trade-off relationship between channel resistance and JFET resistance is improved. The same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET including SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.

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