Method of manufacture of a semiconductor device

Details Method of manufacture of a semiconductor device Method of manufacture of a semiconductor device

2006-10-10

2006-10-10

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000

Reexamination Certificate

active

07118972

ABSTRACT:
A method of manufacture of a semiconductor device uses simplified steps while improving the electrical properties of each element in the semiconductor device. Over a semiconductor substrate, having a memory gate electrode, control gate electrode and gate electrode formed thereover, a silicon oxide film, a silicon nitride film and a silicon oxide film are formed successively. The silicon oxide film formed over the gate electrode is then removed by wet etching. The silicon oxide film, silicon nitride film and silicon oxide film formed over the semiconductor substrate are removed successively by anisotropic dry etching, whereby respective sidewall spacers having a relatively large width and a relatively small width are formed.

REFERENCES:
patent: 5329482 (1994-07-01), Nakajima et al.
patent: 2004/0152262 (2004-08-01), Ichige et al.
patent: 5-102428 (1993-04-01), None
patent: 6-181293 (1994-06-01), None
patent: 7-176729 (1995-07-01), None

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