Method of manufacture for a trench isolation structure...

Details Method of manufacture for a trench isolation structure... Method of manufacture for a trench isolation structure...

2007-01-09

2007-01-09

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S431000, C438S433000, C438S435000

Reexamination Certificate

active

10870016

ABSTRACT:
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having an implanted buffer layer (133) located in the sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the implanted buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.

REFERENCES:
patent: 5880020 (1999-03-01), Mano
patent: 5915195 (1999-06-01), Fulford et al.
patent: 6274455 (2001-08-01), Seo
patent: 6576558 (2003-06-01), Lin et al.
patent: 2003/0049893 (2003-03-01), Currie et al.
patent: 2004/0212035 (2004-10-01), Yeo et al.

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