Method of making wafer structure for backside illuminated...

Details Method of making wafer structure for backside illuminated... Method of making wafer structure for backside illuminated...

2007-01-24

2009-12-29

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31121, C438S070000, C438S071000

Reexamination Certificate

active

07638852

ABSTRACT:
A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

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