Method of making transistor including reentrant profile

Details Method of making transistor including reentrant profile Method of making transistor including reentrant profile

2011-04-12

2011-04-12

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S057000

Reexamination Certificate

active

07923313

ABSTRACT:
A method of manufacturing a transistor includes providing a substrate including in order an electrically conductive material layer and an electrically insulating material layer; depositing a resist material layer over the electrically insulating material layer; patterning the resist material layer to expose a portion of the electrically insulating material layer; removing the exposed electrically insulating material layer to expose a portion of the electrically conductive material layer; removing the exposed electrically conductive material layer to create a reentrant profile in the electrically conductive material layer and the electrically insulating material layer; conformally coating the substrate and the exposed material layers with a second electrically insulating material layer; conformally coating the second electrically insulating material layer with a semiconductor material layer; and directionally depositing an electrically conductive material layer over the semiconductor material layer.

REFERENCES:
patent: 5641694 (1997-06-01), Kenney
patent: 6972461 (2005-12-01), Chen et al.
patent: 7413982 (2008-08-01), Levy
patent: 7456429 (2008-11-01), Levy
patent: 7571529 (2009-08-01), Sirringhaus et al.
patent: 7586130 (2009-09-01), Kawashima et al.
patent: 7592218 (2009-09-01), Brown
patent: 7629633 (2009-12-01), Chan et al.
patent: 2005/0164464 (2005-07-01), Hecht et al.
patent: 2007/0131998 (2007-06-01), Lin et al.
patent: 2008/0149913 (2008-06-01), Tanaka et al.
patent: 2008/0166884 (2008-07-01), Nelson et al.
patent: 2009/0001470 (2009-01-01), Anderson et al.
patent: 2009/0032803 (2009-02-01), Appenzeller et al.
patent: 2009/0130858 (2009-05-01), Levy
patent: 2009/0166725 (2009-07-01), Lee
patent: 63-170971 (1988-07-01), None
patent: 05-144744 (1993-06-01), None
patent: 2005-203395 (2005-07-01), None
patent: 2007-284766 (2007-11-01), None
patent: 2008-103636 (2008-05-01), None
patent: 2009-0017045 (2009-02-01), None
patent: 2009-0017046 (2009-02-01), None
patent: WO 89/05516 (1989-06-01), None

Affiliated with

Also associated with

Rating

Method of making transistor including reentrant profile does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making transistor including reentrant profile, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making transistor including reentrant profile will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2677801