Method of making three dimensional NAND memory

Details Method of making three dimensional NAND memory Method of making three dimensional NAND memory

2007-03-27

2009-08-18

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S478000, C438S258000, C257SE21103, C257SE21204

Reexamination Certificate

active

07575973

ABSTRACT:
A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell, and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell.

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