Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-30
2007-01-30
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S696000, C438S705000
Reexamination Certificate
active
10497369
ABSTRACT:
A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the bases of the trenches; anisotropically etching lateral channels (4) from the second trenches, until adjacent etch fronts (16) substantially meet; and detaching said layer from the substrate. The trenches may be arranged so that the resultant layer has rows of slots, whit the slots in adjacent rows being mutually offset. Solar cells may be formed on strips (5) between the trenches, having lengths of more than 50 mm, widths of up to 5 mm, and thicknesses of less than 100 microns, and having two electrical contacts on the same face (6) of each strip (5).
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Blakers Andrew William
Weber Klaus Johannes
Dang Phuc T.
Origin Energy Solar Pty. Ltd.
Woodcock & Washburn LLP
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