Method of making thin silicon sheets for solar cells

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S696000, C438S705000

Reexamination Certificate

active

10497369

ABSTRACT:
A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the bases of the trenches; anisotropically etching lateral channels (4) from the second trenches, until adjacent etch fronts (16) substantially meet; and detaching said layer from the substrate. The trenches may be arranged so that the resultant layer has rows of slots, whit the slots in adjacent rows being mutually offset. Solar cells may be formed on strips (5) between the trenches, having lengths of more than 50 mm, widths of up to 5 mm, and thicknesses of less than 100 microns, and having two electrical contacts on the same face (6) of each strip (5).

REFERENCES:
patent: 4982099 (1991-01-01), Lischke
patent: 5306647 (1994-04-01), Lehmann et al.
patent: 6689694 (2004-02-01), Cho et al.
patent: 2001/0013630 (2001-08-01), Cho et al.
patent: 3 803 769 (1989-08-01), None
patent: 19 650 111 (1998-06-01), None
patent: WO 98/32164 (1998-07-01), None

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