Method of making submicron circuit structures

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430312, 430313, 430316, 430394, 430502, 427 96, 427 431, G03C 500

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active

045579954

ABSTRACT:
Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.

REFERENCES:
patent: 3264105 (1966-08-01), Houtz
patent: 3313626 (1967-04-01), Whitney
patent: 3798036 (1974-03-01), Schnepf
patent: 3964908 (1976-06-01), Bargon et al.

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