Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-01
2005-03-01
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S181000, C438S308000, C438S439000, C438S449000, C438S510000, C438S514000, C438S515000, C438S526000, C438S528000, C438S530000
Reexamination Certificate
active
06861320
ABSTRACT:
The invention provides a method of making silicon-on-insulator SOI substrates with nitride buried insulator layer by implantation of molecular deuterated ammonia ions ND3+, instead of implanting nitrogen ions (N+, or N2+) as is done in prior art nitride SOI processes. The resultant structure, after annealing, has a buried insulator with a defect density which is substantially lower than in prior art nitride SOI. The deuterated nitride SOI substrates allow much better heat dissipation than SOI with a silicon dioxide buried insulator. These substrates can be used for manufacturing of high speed and high power dissipation monolithic integrated circuits.
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Elms Richard
Luhrs Michael K.
Silicon Wafer Technologies Inc.
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