Method of making sidewall polymer on polycide gate for LDD struc

Details Method of making sidewall polymer on polycide gate for LDD struc Method of making sidewall polymer on polycide gate for LDD struc

1996-04-22

1998-09-01

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438695, 438696, 438306, H01L 21336

Patent

active

058010777

ABSTRACT:
A method for forming an LDD structure using a polymeric spacer on a polysilicon or a polycide gate is described. A layer of gate silicon oxide is provided over the surface of a semiconductor substrate. A polysilicon or polycide layer is provided overlying the gate silicon oxide layer. The polysilicon or polycide layer is covered with a photoresist layer which is patterned to form a mask. The polysilicon or polycide layer is etched away where it is not covered by the mask to form gate electrodes whereby a polymer is formed on the sidewalls of the mask and the gate electrodes. First ions are implanted into the semiconductor substrate not covered by the mask and the polymer to form source and drain regions. The polymer and mask are removed. Second ions are implanted into the semiconductor substrate whereby lightly doped source and drain regions are formed within the semiconductor substrate which was covered by the polymer completing the formation of a lightly doped source and drain structure in the fabrication of an integrated circuit device.

REFERENCES:
patent: 4528066 (1985-07-01), Merkling, Jr.
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5032535 (1991-07-01), Kamijo et al.
patent: 5471080 (1995-11-01), Satoh et al.

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