Method of making sensitive positive electron beam resists

Details Method of making sensitive positive electron beam resists Method of making sensitive positive electron beam resists

1982-12-07

1983-11-15

Louie, Jr., Won H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430326, 430327, 430910, 430935, 427 431, G03C 500

Patent

active

044156537

ABSTRACT:
The method of making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methacrylonitrile (MCN) is disclosed utilizing a prebaking step in which the copolymer resist in film form on the substrate is prebaked at a temperature below the decomposition temperature to improve the sensitivity of the resist. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity, and high plasma etch resistance which makes them desirable for dry etching techniques in addition to other masking techniques which enable submicron resolution.

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