Method of making semiconductor device with floating bate

Details Method of making semiconductor device with floating bate Method of making semiconductor device with floating bate

1995-02-09

1997-05-27

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438594, 438981, H01C 218247, H01C 21265

Patent

active

056331843

ABSTRACT:
A semiconductor memory device effectively prevents formation of a gate bird's beak oxide film at a region through which electrons move in data writing and erasing operations. In the semiconductor memory device, nitride films having a thickness larger than that of a first gate oxide film are formed on a drain impurity diffusion layer and a source impurity diffusion layer to surround the first gate oxide film. A floating gate electrode has opposite ends protruded over the nitride films.

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patent: 5081054 (1992-01-01), Wu et al.
patent: 5138410 (1992-08-01), Takebuchi
patent: 5215934 (1993-06-01), Tzeng
patent: 5278440 (1994-01-01), Shimoji
patent: 5359218 (1994-10-01), Taneda

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