Method of making semiconductor device by polishing with...

Details Method of making semiconductor device by polishing with... Method of making semiconductor device by polishing with...

2006-01-10

2006-01-10

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000

Reexamination Certificate

active

06984582

ABSTRACT:
A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

REFERENCES:
patent: 5643406 (1997-07-01), Shimomura et al.
patent: 5664990 (1997-09-01), Adams et al.
patent: 6099662 (2000-08-01), Wang et al.
patent: 6143656 (2000-11-01), Yang et al.
patent: 6194317 (2001-02-01), Kaisaki et al.
patent: 6261158 (2001-07-01), Holland et al.
patent: 6645550 (2003-11-01), Cheung et al.
patent: 6720264 (2004-04-01), Sahota et al.
patent: 6783432 (2004-08-01), Li et al.
patent: 6855035 (2005-02-01), Homma et al.
patent: 2002/0048958 (2002-04-01), Kubo et al.
patent: 2002-083787 (2002-03-01), None
patent: 2002-141312 (2002-05-01), None
patent: 2002-541649 (2002-12-01), None

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