Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

1997-10-16

1999-07-06

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438978, 438701, H01L 21336

Patent

active

059207817

ABSTRACT:
A semiconductor device with a longer channel length is made by first forming an insulating film over a semiconductor substrate, next forming on this insulating film an electrode having a main part and side parts which are thinner than the main part and may each have a tapered surface, then doping a surface of the semiconductor substrate by using the electrode as a mask and by ion-implanting impurities towards surfaces of the insulating film and the electrode through these side parts, and carrying out an annealing process and thereby causing the impurities to diffuse.

REFERENCES:
patent: 4282646 (1981-08-01), Fortino et al.
patent: 4420871 (1983-12-01), Scheibe
patent: 4558338 (1985-12-01), Sakata
patent: 4599118 (1986-07-01), Han et al.
patent: 4603472 (1986-08-01), Schwabe et al.
patent: 4914047 (1990-04-01), Seki
patent: 5427971 (1995-06-01), Lee et al.
patent: 5514611 (1996-05-01), Kim et al.

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