Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-04-03
1990-04-24
Kaplan, G. L.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
156643, B23K 2800
Patent
active
049197800
ABSTRACT:
A method for fabricating exactly aligned apertures for use in electron and ion microscopy involves the placing of a very sharply pointed tip (1) in front of a set of extremely thin, precisely spaced metal foils (3,5) in an atmosphere of heavy gas atoms. The application of an elevated voltage at the tip (1) will result in a sputtering operation to commence and erode the metal foils (3,5) at a location underneath the facing tip (1). The sputtering operation is continued until the first ions are detected to emerge on the far side of the lens structure (2).
REFERENCES:
Fink, H. W. "Mono--Atomic Tips For Scanning Tunneling Microscopy." IBM J. Res. and Dev., vol. 30, No. 5, 1986, pp. 460-465.
Binnig, G. K., et al. "Sputter Tip." IBM Technical Disclosure Bulletin, vol. 27, No. 8, Jan. 1985, p. 4890.
Asayag, G. B. et al. "Close-Spaced Ion Emission from Gold and Gallium Liquid Metal Ion Source." Surface Science, vol. 181, 1988, pp. 362-369.
Fink Hans-Werner
Morin Roger
Schmid Heinz
Stocker Werner
International Business Machines - Corporation
Kaplan G. L.
Schechter Marc D.
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