Method of making nonvolatile semiconductor device having sidewal

Details Method of making nonvolatile semiconductor device having sidewal Method of making nonvolatile semiconductor device having sidewal

1997-06-24

1999-04-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, H01L 218247

Patent

active

058917756

ABSTRACT:
In a nonvolatile semiconductor memory device, including a semiconductor substrate, a floating gate formed over the semiconductor substrate, and a control gate formed over the floating gate, a split gate is formed on a sidewall of the control gate and the floating gate and is electrically connected to the control gate. A source region and a drain region are formed in the semiconductor substrate on the sides of the control gate and the split gate.

REFERENCES:
patent: 4925807 (1990-05-01), Yoshikawa
patent: 5041886 (1991-08-01), Lee
patent: 5268585 (1993-12-01), Yamauchi
patent: 5364806 (1994-11-01), Ma et al.
patent: 5455792 (1995-10-01), Yi
patent: 5607871 (1997-03-01), Han
K. Naruke et al., "A New Flash-Erase EEPROM Cell With A Sidewall Select-Gate On Its Source Side", Tech. Digest of IEDM, 1989, pp. 603-606 No Month.

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