Method of making nonvolatile memory device containing carbon...

Details Method of making nonvolatile memory device containing carbon... Method of making nonvolatile memory device containing carbon...

2007-06-25

2011-12-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S175000

Reexamination Certificate

active

08072791

ABSTRACT:
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode, doping the diode with at least one of nitrogen or carbon, and forming a second electrode over the at least one nonvolatile memory cell.

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