Method of making NMOS and PMOS devices having LDD structures usi

Details Method of making NMOS and PMOS devices having LDD structures usi Method of making NMOS and PMOS devices having LDD structures usi

1997-02-25

1999-09-21

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438229, 438230, 438231, 438232, 438275, 438303, 438306, H01L 21336

Patent

active

059565918

ABSTRACT:
A method of making N-channel and P-channel devices using separate drive-in steps is disclosed. The method includes providing a semiconductor substrate with first and second active regions, introducing a first dopant into the first active region to provide all doping for a source and a drain in the first active region, driving-in the first dopant to form the source and the drain in the first active region, introducing a second dopant into the second active region to provide all doping for a source and a drain in the second active region after driving-in the first dopant, and driving-in the second dopant to form the source and the drain in the second active region. Preferably, the first dopant is arsenic or phosphorus, the second dopant is boron, and the first temperature exceeds the second temperature by at least 50.degree. C. In this manner, the boron need not be subjected to the higher first temperature, thereby reducing boron diffusion.

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