Method of making nanometer Si islands for single electron transi

Details Method of making nanometer Si islands for single electron transi Method of making nanometer Si islands for single electron transi

1998-03-02

2000-01-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438947, H01L 21336

Patent

active

060109343

ABSTRACT:
A method of making nanometer Si islands for single electron transistors is disclosed. Initially, a pad oxide is deposited over a silicon substrate. Oxygen ions are implanted into the silicon substrate to form an oxygen amorphized region and a high-temperature annealing is performed to form a buried oxide layer in the silicon substrate. Then, a thermal silicon oxide is formed to reduce the thickness of the silicon substrate on the buried oxide layer. The thermal oxide is removed and an ultra-thin oxide layer is then formed on the silicon substrate. A plurality of silicon nitride blocks is formed on the ultra-thin silicon oxide. Afterwards, the spacers of the silicon nitride blocks are formed. The silicon nitride blocks are removed by using wet etching technique. The ultra-thin silicon oxide is etched back and the polysilicon spacers are used as hard mask to Si substrate to form a plurality of nanometer silicon islands. The ultra-thin silicon oxide is removed and an ultra-thin oxynitride layer is regrown on the nanometer silicon islands. Finally, a n+ polysilicon layer is conformally deposited onto the silicon substrate and the nanometer silicon islands.

REFERENCES:
patent: 4400865 (1983-08-01), Goth et al.
patent: 5593813 (1997-01-01), Kim
patent: 5886380 (1999-03-01), Nakajima
patent: 5923981 (1999-07-01), Qian
Guo et al., "Si Single-Electron MOS Memory With Nanoscale Floating-Gate and Narrow Channel", IEDM 96, pp. 955-956, 1996.
Anri Nakajima et al., Room Temperature Operation of Si Single-Electron Memory with Self-Aligned Floating Dot Gate, IEDM 1996, pp. 952-956.
Nobuyuki Yoshikawa et al., Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges, Jpn. J. Appl. Phys. vol. 36, Pt. 1, No. 6B, Jun. 1997, pp. 4161-4165.

Affiliated with

Also associated with

Rating

Method of making nanometer Si islands for single electron transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making nanometer Si islands for single electron transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making nanometer Si islands for single electron transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072214