Method of making MOSFET with ultra-thin gate oxide

Details Method of making MOSFET with ultra-thin gate oxide Method of making MOSFET with ultra-thin gate oxide

1999-05-03

2000-11-28

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438659, H01L 21469

Patent

active

061535389

ABSTRACT:
A semiconductor device comprising a miniaturized transistor with high-speed performance is formed with an ultra thin gate oxide layer. The ultra thin gate oxide layer is formed retarding its growth on a nitrogen-rich silicon substrate. Embodiments include ion implanting impurity to displace nitrogen atoms from a nitride layer on the substrate and to force the displaced nitrogen atoms into the surface portion of the semiconductor substrate. The nitrogen atoms retard the growth of the gate oxide layer, thereby enabling formation of an ultra thin gate oxide.

REFERENCES:
patent: 3798752 (1974-03-01), Fujimoto
patent: 4356041 (1982-10-01), Kosa
patent: 5880012 (1999-03-01), Ha et al.
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5960319 (1999-09-01), Iwata et al.

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