Method of making MOS precision capacitor with low voltage coeffi

Details Method of making MOS precision capacitor with low voltage coeffi Method of making MOS precision capacitor with low voltage coeffi

1996-11-24

1998-05-12

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, H01L 218242

Patent

active

057504261

ABSTRACT:
A MOS precision capacitor is formed in an integrated circuit including a p-mos and n-mos transistor without adding to the process steps used in forming the p-mos and n-mos transistor. The MOS precision capacitor includes a n-well formed concurrently with a n-well of the p-mos transistor, a n-type region formed concurrently with a threshold adjust region of the p-mos transistor, an oxide layer formed concurrently with gate oxide layers of the p-mos and n-mos transistors, a first electrode formed over the n-type region, at least one n+ region formed concurrently with source and drain regions of the n-mos transistor by self aligning to the sidewall of the first electrode, and a second electrode connected to the at least one n+ region. Good gate oxide tracking between the MOS precision capacitor, the p-mos transistor, and the n-mos transistor, is provided by forming the n-type region of the MOS precision capacitor with a dopant concentration approximately equal to that of the threshold adjust region of the p-mos transistor, and approximately within an order of magnitude of that of the n-mos transistor. Good ground isolation for the MOS precision capacitor is provided by forming the MOS precision capacitor in its own n-well. Low voltage and signal frequency dependency for the MOS precision capacitor is provided by respectively forming the n-type and n+ regions between the first and second electrodes of the MOS precision capacitor such that their respective dopant concentrations are greater than that of the n-well.

REFERENCES:
patent: 5017507 (1991-05-01), Miyazawa
patent: 5055905 (1991-10-01), Anmo
patent: 5136357 (1992-08-01), Hesson et al.
patent: 5264723 (1993-11-01), Strauss
patent: 5266821 (1993-11-01), Chern et al.
patent: 5286666 (1994-02-01), Katto et al.
patent: 5320976 (1994-06-01), Chin et al.
patent: 5360989 (1994-11-01), Endo

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