Method of making LDD structure spaced from channel doped region

Details Method of making LDD structure spaced from channel doped region Method of making LDD structure spaced from channel doped region

1997-06-12

1999-05-18

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L21/336

Patent

active

059045302

ABSTRACT:
A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.

REFERENCES:
patent: 4939100 (1990-07-01), Jeuch et al.
patent: 5073512 (1991-12-01), Yoshino
patent: 5082794 (1992-01-01), Pfiester et al.

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