Method of making IC devices having stable CVD titanium nitride f

Details Method of making IC devices having stable CVD titanium nitride f Method of making IC devices having stable CVD titanium nitride f

1998-03-04

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 134 12, H01L 2144

Patent

active

060966459

ABSTRACT:
A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.

REFERENCES:
patent: 5212119 (1993-05-01), Hah et al.
patent: 5576071 (1996-11-01), Sandhu
patent: 5612558 (1997-03-01), Harshfield
patent: 5710070 (1998-01-01), Chan
patent: 5731239 (1998-03-01), Wong et al.

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