Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-04-13
1997-04-08
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
148DIG55, 438643, H01L 2170, H01L 2700
Patent
active
056187505
ABSTRACT:
A fuse for a semiconductor integrated circuit is provided wherein a strip of corrosive material (82), such as aluminum, has one end thereof connected to a conductive strip (84) of a non-corrosive material and the other end thereof connected to a strip (94) of non-corrosive conductive material. The one end of the conductive strip (82) connected to the conductive strip (84) is connected through a contact (88). Similarly, the other end of the strip (82) is connected through a contact (96) to the non-corrosive conductive strip (94). The strips 84 and 94 provide a barrier to corrosion. This occurs whenever a break (104) is formed in the fuse to expose the ends of the fuse (82) at the break to a corrosive atmosphere. Alternatively, the fuse could be connected to corrosive underlying layers with contacts (118) and (124) of non-corrosive material such as a polysilicon or a polyside, or the active region of the substrate itself.
REFERENCES:
patent: 5015604 (1991-05-01), Lim et al.
Fukuhara Hideyuki
Miyai Yoichi
Booth Richard A.
Donaldson Richard
Heiting Leo
Holland Robby
Niebling John
LandOfFree
Method of making fuse with non-corrosive termination of corrosiv does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making fuse with non-corrosive termination of corrosiv, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making fuse with non-corrosive termination of corrosiv will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2397497