Method of making flash memory cells and peripheral circuits...

Details Method of making flash memory cells and peripheral circuits... Method of making flash memory cells and peripheral circuits...

2011-01-18

2011-01-18

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE29309

Reexamination Certificate

active

07872295

ABSTRACT:
An integrated circuit includes flash memory cells, and peripheral circuitry including low voltage transistors (LVT) and high voltage transistors (HVT). The integrated circuit includes a tunnel barrier layer comprising SiON, SiN or other high-k material. The tunnel barrier layer may comprise a part of the gate dielectric of the HVTs. The tunnel barrier layer may constitute the entire gate dielectric of the HVTs. The corresponding tunnel barrier layer may be formed between or upon shallow trench isolation (STIs). Therefore, the manufacturing efficiency of a driver chip IC may be increased.

REFERENCES:
patent: 6784484 (2004-08-01), Blomme et al.
patent: 7026686 (2006-04-01), Blomme et al.
patent: 7038291 (2006-05-01), Goda et al.
patent: 7268090 (2007-09-01), Lee
patent: 2006/0198190 (2006-09-01), Lue
patent: 2006/0202252 (2006-09-01), Wang et al.
patent: 2006/0202262 (2006-09-01), Lee
patent: 2009/0173989 (2009-07-01), Yaegashi
patent: 11-204762 (1999-07-01), None
patent: 2006-148044 (2006-06-01), None
patent: 1020000065599 (2000-11-01), None
patent: 1020060057958 (2006-05-01), None

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