Method of making flash memory

Details Method of making flash memory Method of making flash memory

1996-07-29

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438261, 438264, H01L 21265, H01L 218247

Patent

active

056610572

ABSTRACT:
Flash memories are produced by a novel production method according to the invention, the method comprising removing field insulation films by an etching process using side walls provided adjacent to gate portions consisting essentially of a floating gate electrode, a control gate electrode, and an inter-gate insulation film, as part of a mask for the etching. The inventive method allows the production of higher integrated flash memories without causing damage, particularly degradation of dielectric strength, to the portion of a gate insulation film situated between part of the floating gate electrode and an impurity diffused source electrode formed in the substrate.

REFERENCES:
patent: 5208175 (1993-05-01), Choi et al.
patent: 5372963 (1994-12-01), Mori
patent: 5534455 (1996-07-01), Liu
patent: 5547884 (1996-08-01), Yamaguchi et al.
patent: 5589412 (1996-12-01), Iranmanesh et al.

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