Method of making EPROM in high density CMOS having metallization

Details Method of making EPROM in high density CMOS having metallization Method of making EPROM in high density CMOS having metallization

1997-11-03

1999-07-27

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438258, H01L 218247

Patent

active

059306130

ABSTRACT:
A method of making an EPROM transistor in a high density CMOS integrated circuit having a gate electrode to metallization capacitor. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at low voltages which high density CMOS transistors can handle.

REFERENCES:
patent: 5014098 (1991-05-01), Schlais et al.
patent: 5290725 (1994-03-01), Tanaka et al.
patent: 5591658 (1997-01-01), Cacharelis
patent: 5702988 (1997-12-01), Liang
patent: 5712178 (1998-01-01), Cho et al.

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