Method of making discrete trap memory (DTM) mediated by...

Details Method of making discrete trap memory (DTM) mediated by... Method of making discrete trap memory (DTM) mediated by...

2009-03-12

2010-12-07

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S410000, C257SE51001, C257SE51002, C257SE51003, C257SE51004, C257SE51005, C257SE51006, C257SE29170, C257SE21050, C257SE21520, C977S773000, C977S763000, C438S257000, C438S260000, C438S261000, C438S287000, C438S288000

Reexamination Certificate

active

07847325

ABSTRACT:
A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

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