Method of making direct bonded wafers having a void free interfa

Details Method of making direct bonded wafers having a void free interfa Method of making direct bonded wafers having a void free interfa

1988-09-06

1990-07-03

Ball, Michael W.

Fishing, trapping, and vermin destroying

148DIG12, 437225, 228231, 228234, H01L 21324

Patent

active

049391011

ABSTRACT:
Wafers which are direct bonded to each other in accordance with prior art processes suffer from voids at their bonded interface. Annealing such composite structures at high temperature and high pressure (for silicon wafers preferably about 1,100.degree. C. and 15,000 psi) eliminates all voids which are not a result of the presence of a particle on one of the wafers at the time of mating.

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