Methods of substrate heating for vapor phase epitaxial growth

Details Methods of substrate heating for vapor phase epitaxial growth Methods of substrate heating for vapor phase epitaxial growth

1990-05-18

1992-02-25

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156612, 156613, 156614, C30B 1900

Patent

active

050910442

ABSTRACT:
An apparatus for vapor phase epitaxial growth comprises a reactor tube, a raw material gas supplying means for supplying a raw material gas or gas mixture for thin film formation into the reactor tube, a liquid tank disposed within the reactor tube, a melt stored in the liquid tank, and a heater for heating the melt. The reverse side of a substrate is kept in contact with the melt. The substrate is heated to a desired temperature by heat conduction from the melt.

REFERENCES:
patent: 3294661 (1966-12-01), Maissel
patent: 3420704 (1969-01-01), Webb
patent: 3480472 (1969-11-01), Dersin et al.
patent: 3845738 (1974-11-01), Berkman et al.
patent: 4331707 (1982-05-01), Maruska et al.
patent: 4778559 (1988-10-01), McNeilly
patent: 4811687 (1989-03-01), Prince

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