Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2011-08-09
2011-08-09
Wilson, Allan R (Department: 2815)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C257S544000, C257S549000, C257SE21544, C257SE25005, C257SE27124
Reexamination Certificate
active
07994032
ABSTRACT:
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
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Chiang Shang-Yi
Wang Chung
Wuu Shou-Gwo
Yaung Dun-Nian
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Wilson Allan R
LandOfFree
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