Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-15
2000-07-18
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438686, 438688, 438660, 438661, 438662, 438663, H01L 2144
Patent
active
06090710&
ABSTRACT:
A method of making Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin is disclosed for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.
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Andricacos Panayotis Constantinou
Deligianni Hariklia
Harper James McKell Edwin
Hu Chao-Kun
Pearson Dale Jonathan
Gurley Lynne A.
International Business Machines - Corporation
Niebling John F.
Trepp Robert
Tung Randy
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