Method of making copper alloys for chip and package interconnect

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438686, 438688, 438660, 438661, 438662, 438663, H01L 2144

Patent

active

06090710&

ABSTRACT:
A method of making Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin is disclosed for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

REFERENCES:
patent: 4120758 (1978-10-01), Rippere
patent: 4388346 (1983-06-01), Bickler
patent: 4400351 (1983-08-01), Komori et al.
patent: 4443274 (1984-04-01), Brock et al.
patent: 4511410 (1985-04-01), Shapiro et al.
patent: 4586967 (1986-05-01), Shapiro et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4749548 (1988-06-01), Akatsu et al.
patent: 4798660 (1989-01-01), Ermer et al.
patent: 4830933 (1989-05-01), Hodes et al.
patent: 4915745 (1990-04-01), Pollocke et al.
patent: 5004520 (1991-04-01), Tsuji et al.
patent: 5021105 (1991-06-01), Asai et al.
patent: 5023698 (1991-06-01), Kobayashi et al.
patent: 5077005 (1991-12-01), Kato
patent: 5221411 (1993-06-01), Narayan
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5656860 (1997-08-01), Lee
patent: 5780172 (1998-07-01), Fister et al.
patent: 5821627 (1998-10-01), Mori et al.
patent: 5916695 (1999-06-01), Fister et al.
patent: 6010960 (2000-01-01), Nogami
Vol. 013, No. 079 (C-571) Patent Abstract of Japan, 22, Feb. 1989.
Vol. 37 No. 10 IBM Technical Disclosure Bulletin,, Oct. 10, 1994, pp. 61.about.62, XP002098676, New York, U.S.
Vol. 01 No. 255 (C-606) Patent Abstract of Japan, Jun. 13, 1989.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making copper alloys for chip and package interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making copper alloys for chip and package interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making copper alloys for chip and package interconnect will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2036493

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.