Method of making borderless contacts in an integrated circuit

Details Method of making borderless contacts in an integrated circuit Method of making borderless contacts in an integrated circuit

2005-06-28

2005-06-28

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S700000, C438S704000, C438S710000, C438S720000, C438S724000

Reexamination Certificate

active

06911395

ABSTRACT:
According to one embodiment (100), a method of forming borderless contacts may include forming a composite layer over a first insulating layer (102). A contact hole may be formed through a composite layer and a first insulating layer (104). A conducting layer may then be formed (106), including within a contact hole. Portions of a conducting layer may then be removed with a composite layer as a polish stop (108), and a contact structure may be formed. A first interconnect structure and a second insulating layer may then be formed over a first insulating layer (110and112). A borderless contact pattern may then be etched with a composite layer as an etch stop (114).

REFERENCES:
patent: 5604374 (1997-02-01), Inou et al.
patent: 5840624 (1998-11-01), Jang et al.
patent: 6136682 (2000-10-01), Hegde et al.
patent: 6255700 (2001-07-01), Yoshida et al.
patent: 6406987 (2002-06-01), Huang
patent: 6448140 (2002-09-01), Liaw

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