Method of making bipolar transistors and resulting product

Details Method of making bipolar transistors and resulting product Method of making bipolar transistors and resulting product

2006-06-27

2006-06-27

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S311000, C438S555000

Reexamination Certificate

active

07067383

ABSTRACT:
A method of forming bipolar transistors by using the same mask to form the collector region in a substrate of an opposite conductivity type as to form the base in the collector region. More specifically, impurities of a first conductivity type are introduced into a region of a substrate of a second conductivity type through a first aperture in a first mask to form a collector region. Impurities of the second conductivity type are introduced in the collector through the first aperture in the first mask to form the base region. Impurities of the first conductivity type are then introduced into the base region through a second aperture in a second mask to form the emitter region. The minimum dimension of the first aperture of the first mask is selected for a desired collector to base breakdown voltage. This allows tuning of the breakdown voltage.

REFERENCES:
patent: 4106954 (1978-08-01), de Brebisson et al.
patent: 4485552 (1984-12-01), Magdo et al.
patent: 4551906 (1985-11-01), Ogura et al.
patent: 4975751 (1990-12-01), Beasom
patent: 5036021 (1991-07-01), Goto
patent: 5091336 (1992-02-01), Beasom
patent: 5837590 (1998-11-01), Latham et al.
patent: 5849613 (1998-12-01), Peidous
patent: 6080614 (2000-06-01), Neilson et al.
patent: 6555894 (2003-04-01), Beasom
S. Wolf, “Silicon Processing for the VLSI Era,” vol. II, 1990, pp. 468-472.
Wolf, “Silicon Processing for the VLSI Era”, 1990, vol. II, p. 471.

Affiliated with

Also associated with

Rating

Method of making bipolar transistors and resulting product does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making bipolar transistors and resulting product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making bipolar transistors and resulting product will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3639562