Method of making bipolar transistor having reduced resistance

Details Method of making bipolar transistor having reduced resistance Method of making bipolar transistor having reduced resistance

1997-09-17

1999-11-23

Fourson, George

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

438202, 438309, 438364, 438365, 438369, 438508, 438509, H01L 21331

Patent

active

059899689

ABSTRACT:
In a bipolar transistor and the manufacturing method thereof, the bipolar transistor includes a first conductive well, an emitter impurity layer formed in the center of the well, a base impurity layer formed in the form of completely surrounding the emitter impurity layer, and a first conductive high-concentration collector impurity layer having an annular shape along the edge of the well, and maintaining a constant interval from the base impurity layer. The first conductive layer formed to be parallel with the high-concentration collector impurity layer is connected therewith through a contact hole, and is connected with the collector electrode through another contact hole. Owing to a simple manufacturing process, the processing time and cost can be reduced. Also, parasitic bipolar transistors are not generated nor is increased collector resistance produced, thereby increasing reliability.

REFERENCES:
patent: 3836998 (1974-09-01), Kocsis et al.
patent: 4871977 (1989-10-01), Schilling et al.
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 5179432 (1993-01-01), Husher
patent: 5286986 (1994-02-01), Kihara et al.
patent: 5374845 (1994-12-01), Havemann
patent: 5387553 (1995-02-01), Moksvold et al.
patent: 5389552 (1995-02-01), Irammanesh et al.
patent: 5488002 (1996-01-01), Kimura et al.
patent: 5589409 (1996-12-01), Bulucea et al.
patent: 5698459 (1997-12-01), Grubisich et al.
patent: 5717241 (1998-02-01), Mahli et al.
patent: 5733791 (1998-03-01), Iranmanesh

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