Method of making and accessing split gate memory device

Details Method of making and accessing split gate memory device Method of making and accessing split gate memory device

1997-06-16

1998-10-20

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438563, 438596, 438933, H01L 21336

Patent

active

058245847

ABSTRACT:
A non-volatile memory having a control gate (14) and a sidewall select gate (28) is illustrated. The sidewall select gate (28) is formed in conjunction with a semiconductor doped oxide (20) to form a non-volatile memory cell (7). The semiconductor element used to dope the oxide layer (20) will generally include silicon or germanium. The non-volatile memory cell (7) is programmed by storing electrons in the doped oxide (20), and is erased using band-to-band tunneling.

REFERENCES:
patent: 4837173 (1989-06-01), Alvis et al.
patent: 4951100 (1990-08-01), Parrillo
patent: 5013675 (1991-05-01), Shen et al.
patent: 5063172 (1991-11-01), Manley
patent: 5408115 (1995-04-01), Chang
patent: 5422504 (1995-06-01), Chang et al.
patent: 5467308 (1995-11-01), Chang et al.
patent: 5470794 (1995-11-01), Anjum et al.
Hanafi, et al., Fast and Long Retention-Time Nano-Crystal Memory:, IEEE Transactions on Electron Devices, vol. 43, No. 9, pp. 1553-1558, Sep. 1996.
Kikuchi, et al., "Ti Silicidation Technology for High Speed EPROM Devices", IEEE Electron Devices Society, The Japan Society of Applied Physics, 1983 Symposium on VLSI Technology, Digest of Technical Papers, Cat. No. 83, Ch 1873-9, pp. 112-113 no month.

Affiliated with

Also associated with

Rating

Method of making and accessing split gate memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making and accessing split gate memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making and accessing split gate memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-243825