Method of making an integrated circuit having an opening for a f

Details Method of making an integrated circuit having an opening for a f Method of making an integrated circuit having an opening for a f

1994-09-06

1999-03-09

Niebling, John F.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438601, 257529, 148DIG55, H01L 2182

Patent

active

058799664

ABSTRACT:
An improved structure and method of forming a protective layer over an opening in insulation layers over a fuse is presented. The protective layer prevents contaminates from entering the exposed insulation layers in a fuse opening while not interfering with the laser trimming of the fuse. An opening through the layers over a fuse is made forming vertical sidewalls which expose portions of the insulation layers. A protective layer is formed over the insulation layer, the sidewalls and fuse thus preventing contaminates from diffusing into the exposed insulation layers. A second opening is made in the protective layer over the fuse link to allow a laser beam to melt the underlying fuse link.

REFERENCES:
patent: 4536949 (1985-08-01), Takayama et al.
patent: 4628590 (1986-12-01), Udo et al.
patent: 5025300 (1991-06-01), Billig et al.
patent: 5241212 (1993-08-01), Montonami et al.

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