Method of making an insulated gate semiconductor device

Details Method of making an insulated gate semiconductor device Method of making an insulated gate semiconductor device

1995-03-21

1997-08-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438230, 438286, 438303, 438592, 438595, H01L 21265

Patent

active

056610483

ABSTRACT:
An insulated gate field effect transistor (10) having a reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor substrate (11) and a drain extension region (25) is formed in the dopant well (13). An oxide layer (26) is formed on the dopant well (13) wherein the oxide layer (26) has a thickness of at least 400 angstroms. A gate structure (61) having a gate shunt portion (32) over a thinned portion of the oxide (26) and a gate extension portion (58) over an unthinned portion of the oxide (26). The thinned portion of the oxide (26) forms a gate oxide of the field effect transistor (10) and the unthinned portion lowers a capacitance of the gate shunt portion (32) of the field effect transistor (10).

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