Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-08-04
2000-02-22
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438383, 438303, 257350, 257379, H01L 218234, H01L 21266
Patent
active
060279648
ABSTRACT:
A method of making an IGFET with a selectively doped gate in combination with a protected resistor includes the steps of providing a semiconductor substrate with an active region and a resistor region, forming a gate over the active region, forming a diffused resistor in the resistor region, forming an insulating layer over the active region and the resistor region, forming a masking layer over the insulating layer that includes an opening above a first portion of the gate and covers the resistor region and a second portion of the gate, applying an etch using the masking layer as an etch mask to remove the insulating layer above the first portion of the gate so that an unetched portion of the insulating layer forms a gate-protect insulator over the second portion of the gate and another unetched portion of the insulating layer forms a resistor-protect insulator over the diffused resistor, and forming a source and a drain in the active region including at least partially doping the source and the drain during a doping step that provides more doping for the first portion of the gate than for the second portion of the gate after forming the masking layer. In this manner, the masking layer can provide both an etch mask for the resistor-protect insulator and an implant mask for selectively doping the gate.
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U.S. Patent Application Serial No. 08/787,036, filed Jan. 28, 1997, entitled: "Method Of Making An IGFET With A Non-Uniform Lateral Doping Profile In The Channel Region", by Gardner et al. (copy not enclosed).
Duane Michael
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Coleman William David
Fahmy Wael
Holloway William W.
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