Method of making an IGFET with a non-uniform lateral doping prof

Details Method of making an IGFET with a non-uniform lateral doping prof Method of making an IGFET with a non-uniform lateral doping prof

1997-01-28

2000-02-22

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438276, 438286, 438278, 438290, 438291, 438303, 438305, 438307, H01L 21336

Patent

active

060279788

ABSTRACT:
A method of making an IGFET with a selectively doped channel region is disclosed. The method includes providing a semiconductor substrate with a device region, forming a gate over the device region, forming a masking layer that partially covers the gate and the device region, implanting a dopant into portions of the gate and the device region outside the gate that are not covered by the masking layer, transferring the dopant through the uncovered portion of the gate into a portion of an underlying channel region in the device region, thereby providing the channel region with a non-uniform lateral doping profile and adjusting a threshold voltage, and forming a source and a drain in the device region. The dopant can be implanted through the portion of the gate into the portion of the channel region, or alternatively, the dopant can be diffused from the portion of the gate into the portion of the channel region. In addition, the dopant can be the same conductivity type as the channel region, thereby increasing the dopant concentration of the portion of the channel region and adjusting the threshold voltage away from zero, or the dopant can be opposite conductivity type as the channel region, thereby decreasing the dopant concentration of the portion of the channel region and adjusting the threshold voltage towards zero. Preferably, the gate is polysilicon and the masking layer is photoresist. Advantageously, the invention is well-suited for adjusting the threshold voltage, and therefore the drive current, leakage current and speed, of selected IGFETs, so that the fastest IGFETs with the highest leakage currents can be placed in critical speed paths such as common lines in SRAM arrays.

REFERENCES:
patent: 4208780 (1980-06-01), Richman
patent: 4225875 (1980-09-01), Ipri
patent: 4272881 (1981-06-01), Angle
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 4356042 (1982-10-01), Gedaly
patent: 4889820 (1989-12-01), Mori
patent: 4927777 (1990-05-01), Hsu et al.
patent: 5073514 (1991-12-01), Ito et al.
patent: 5091328 (1992-02-01), Miller
patent: 5132753 (1992-07-01), Chang et al.
patent: 5171700 (1992-12-01), Zamanian
patent: 5200358 (1993-04-01), Bollinger et al.
patent: 5286664 (1994-02-01), Horiuchi
patent: 5296398 (1994-03-01), Noda
patent: 5328863 (1994-07-01), Cappelletti et al.
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5350703 (1994-09-01), Lee
patent: 5364807 (1994-11-01), Hwang
patent: 5366915 (1994-11-01), Kadama
patent: 5397715 (1995-03-01), Miller
patent: 5413949 (1995-05-01), Hong
patent: 5424234 (1995-06-01), Kwon
patent: 5436482 (1995-07-01), Ogoh
patent: 5441906 (1995-08-01), Burger
patent: 5451807 (1995-09-01), Fujita
patent: 5482878 (1996-01-01), Burger et al.
patent: 5486487 (1996-01-01), Ginami et al.
patent: 5510279 (1996-04-01), Chien et al.
patent: 5512503 (1996-04-01), Hong
patent: 5518940 (1996-05-01), Hodate et al.
patent: 5521417 (1996-05-01), Wada
patent: 5525552 (1996-06-01), Huang
patent: 5547885 (1996-08-01), Ogoh
patent: 5547888 (1996-08-01), Yamazaki
patent: 5578509 (1996-11-01), Fujita
patent: 5585293 (1996-12-01), Sharma et al.
patent: 5585658 (1996-12-01), Mukai et al.
patent: 5591650 (1997-01-01), Hsu et al.
patent: 5607869 (1997-03-01), Yamazaki
patent: 5648286 (1997-07-01), Gardner et al.
patent: 5654215 (1997-08-01), Gardner et al.
patent: 5656518 (1997-08-01), Gardner et al.
patent: 5672531 (1997-09-01), Gardner et al.
patent: 5677224 (1997-10-01), Kadosh et al.
patent: 5681772 (1997-10-01), Chen et al.
patent: 5817551 (1998-10-01), Fujii et al.
patent: 5851886 (1998-12-01), Peng
patent: 5882974 (1999-03-01), Gardner et al.
patent: 5891782 (1999-04-01), Hsu et al.

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