Method of making amorphous silicon on insulator VLSI circuit str

Details Method of making amorphous silicon on insulator VLSI circuit str Method of making amorphous silicon on insulator VLSI circuit str

1997-11-20

2000-01-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438158, 438675, H01L 218247

Patent

active

060177942

ABSTRACT:
An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.

REFERENCES:
patent: 4882295 (1989-11-01), Czubatyj et al.
patent: 5041884 (1991-08-01), Kumamoto et al.
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5274602 (1993-12-01), Glenn
patent: 5332686 (1994-07-01), Glenn
patent: 5334539 (1994-08-01), Shinar et al.
patent: 5437762 (1995-08-01), Ochiai et al.
"Properties Of The Interface Between Amorphous Silicon and Nitride", by Tsai et al., Mat. Res. Soc. Symp. Proc. vol. 70, pp. 351-359, 1986.
"Defect States In Silicon Nitride", by Robertson et al., Mat. Res. Soc. Symp. Proc. vol. 49, pp. 215-222, 1985.
"The Origin of Slow States At The Interface Of .alpha.-Si:H And Silicon Nitride", by R.A. Street et al., Mat. Res. Soc. Symp. Proc. vol. 70, 1986, pp. 367-372.
"Hydrogenated Amorphous Silicon Thin-Film Transistor-Based Circuit Development For Use In Large Memories", by Stanley G. Burns et al., AMLCD Symposium, Lehigh University, Bethlehem, PA (Oct. 1993).

Affiliated with

Also associated with

Rating

Method of making amorphous silicon on insulator VLSI circuit str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making amorphous silicon on insulator VLSI circuit str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making amorphous silicon on insulator VLSI circuit str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2315407