Method of making a trench MOSFET with deposited oxide

Details Method of making a trench MOSFET with deposited oxide Method of making a trench MOSFET with deposited oxide

2005-10-28

2008-05-13

Gurley, Lynne (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C257S330000

Reexamination Certificate

active

07371641

ABSTRACT:
A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body.

REFERENCES:
patent: 6051468 (2000-04-01), Hshieh
patent: 6291298 (2001-09-01), Williams et al.
patent: 6809375 (2004-10-01), Takemori et al.
patent: 2003/0085422 (2003-05-01), Amali et al.

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