Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-22
2006-08-22
Loke, Steven (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S270000, C438S271000
Reexamination Certificate
active
07094640
ABSTRACT:
A method of forming a trench MOSFET device includes depositing an epitaxial layer over a substrate, both having the first conductivity type, the epitaxial layer having a lower majority carrier concentration than the substrate, forming a body region of a second conductivity type within an upper portion of the epitaxial layer, etching a trench extending into the epitaxial layer from an upper surface of the epitaxial layer, the trench extending to a greater depth from the upper surface of the epitaxial layer than the body region, forming a doped region of the first conductivity type between a bottom portion of the trench and substrate, the doped region having a majority carrier concentration that is lower than that of the substrate and higher than that of the epitaxial layer, wherein the doped region is diffused and spans 100% of the distance from the trench bottom portion to the substrate, forming an insulating layer lining at least a portion of the trench, forming a conductive region within the trench adjacent the insulating layer and forming a source region of said first conductivity type within an upper portion of the body region and adjacent the trench.
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Amato John E.
Hshieh Fwu-Iuan
So Koon Chong
Tsui Yan Man
General Semiconductor Inc.
Loke Steven
Mayer & Williams PC
Mayer, Esq. Stuart H.
Williams Esq. Karin L.
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