Method of making a transistor with a sloped drain diffusion...

Details Method of making a transistor with a sloped drain diffusion... Method of making a transistor with a sloped drain diffusion...

2006-03-28

2009-12-08

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S514000, C257SE29005

Reexamination Certificate

active

07629214

ABSTRACT:
Disclosed is that in a method of manufacturing a semiconductor device of the present invention, when first and second P type diffusion layers using as a backgate region, these layers are formed in such a way that their impurity concentration peaks are shifted, respectively. Then, in the backgate region, a concentration profile of a region where an N type diffusion layer is formed is gradually established. After that, impurity ions, which form the N type diffusion layer, are implanted, and thereafter a thermal treatment is performed to diffuse the N type diffusion layer in a y shape at a lower portion of a gate electrode. This manufacturing method makes it possible to implement an electric filed relaxation in a drain region.

REFERENCES:
patent: 6768173 (2004-07-01), Hebert
patent: 2002/0074612 (2002-06-01), Bulucea et al.
patent: 2003/0127689 (2003-07-01), Hebert
patent: 2006/0220125 (2006-10-01), Otake et al.
patent: 04-103161 (1992-04-01), None
patent: 11-289088 (1999-10-01), None
patent: 2001-250941 (2001-09-01), None
patent: 2002-083941 (2002-03-01), None
patent: 2003-197791 (2003-07-01), None
patent: 2004-104141 (2004-04-01), None
patent: 1995-0007345 (1992-03-01), None
patent: 10-0385764 (2003-05-01), None
patent: 2003-0057447 (2003-07-01), None
Office action dated Dec. 31, 2007 for U.S. Appl. No. 11/393,530.
Office action dated Jun. 26, 2008 for U.S. Appl. No. 11/393,530.
Office action dated Nov. 17, 2008 for U.S. Appl. No. 11/393,530.

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