Method of making a semiconductor structure with a plating...

Details Method of making a semiconductor structure with a plating... Method of making a semiconductor structure with a plating...

2008-03-11

2008-03-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S679000, C438S681000, C257SE21170, C257SE21304, C257SE21010

Reexamination Certificate

active

11306930

ABSTRACT:
Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating enhancement layer (PEL) on the ILD, patterning the ILD and PEL, depositing a seed layer into the pattern formed by the ILD and PEL, and then plating copper on the seed layer. The PEL serves to decrease the resistance across the wafer so to facilitate the plating of the copper. The PEL preferably is an optically transparent and conductive layer.

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“Criteria for Choosing Transparent Conductors,” by Roy G. Gordon, www.mrs.org/publications/bulletin, Aug. 2000, pp. 52-57.

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